Improvement of immunity on MeV electron radiation of MOS structures by means of ultra-shallow fluorine implantation

In this study, we present novel method for improvement of immunity on MeV electron radiation of MOS structures by means of ultra-shallow fluorine implantation from r.f. CF4 plasma. For the purposes of comparison of electrical behavior, MOS capacitors were manufactured. One MeV electron radiation on fabricated MOS devices, was adopted. Obtained results have shown that fluorination of silicon surface results in significant decrease of leakage current as well as uniform distribution of breakdown voltage values. Moreover, capacitance–voltage measurements of MOS structures after fluorine implantation exhibit no frequency dispersion in comparison to reference structures. Presented results demonstrated feasibility of application of ultra-shallow fluorine implantation from r.f. CF4 plasma in technology for radiation-hard silicon devices.