S-band 1.4 cell photoinjector design for high brightness beam generation

In this paper we study in detail the design of a novel S-band radiofrequency photogun structure to maximize the accelerating field experienced by the particles at injection. This is a critical quantity for electron sources as it has a direct impact on the maximum brightness achievable. The proposed design is based on a modification of the latest generation of S-band RF photoinjectors to include novel fabrication approaches. The gun is designed to operate at a 120 MV/m gradient and at an optimal injection phase of 70° providing the beam quality required to enable novel electron beam applications such as single shot time-resolved transmission electron microscopy and ultrafast electron nanodiffraction.