کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
549364 | 872362 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of TID response in core, input/output and high voltage transistors for flash memory
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Total ionizing dose (TID) response in core, input/output (I/O) and high voltage (HV) transistors for 180 nm flash memory technology is comprehensively investigated. Great influence by irradiation is observed for all these transistors, including threshold voltage shift, appearance of subthreshold hump effect and increase of off-state leakage current. Also, we found that the higher the drain voltage, the larger increase of the off-state leakage, which is well known as radiation enhanced drain induced barrier lowering (DIBL) effect. Radiation enhanced DIBL effect leads to worse characteristic degradation of transistor. The HV transistor is the most sensitive parts in flash memory control circuitry.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 51, Issue 6, June 2011, Pages 1148–1151
Journal: Microelectronics Reliability - Volume 51, Issue 6, June 2011, Pages 1148–1151
نویسندگان
Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou,