Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

Using the hybrid nonlinear finite element method (FEM), electrothermomechanical analysis of partially insulated field-effect transistors (PiFETs) is performed in this paper, with their temperature-dependent material parameters treated rigorously. Two types of PiFETs, namely partially insulating oxides (PiOX) under the drain/source (PUSD) and channel (PUC), are studied and compared. The impact of self-heating effect (SHE) on their I–V characteristic, current degradation, temperature and thermal stress distribution are investigated, with some comparisons also made among normal MOSFET, PUSD PiFET, PUC PiFET and SOI FET. The influences of PiOX length, PiOX thickness, and electrode material on their maximum temperature and thermal stress are predicted, which can provide some pragmatic criterion for the development of PiFETs with good reliability.