کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
549443 872373 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Compact modeling of short-channel effects in symmetric and asymmetric 3-T/4-T double gate MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Compact modeling of short-channel effects in symmetric and asymmetric 3-T/4-T double gate MOSFETs
چکیده انگلیسی

In this paper, a two dimensional compact model for the potential distribution of double gate MOSFETs is presented. The approach uses the evanescent method along with the assumption of a parabolic potential distribution in the direction transverse to the channel in the subthreshold region and at the threshold condition. The model introduces a characteristic length which is obtained using an explicit expression. The model may be applied to all double gate structures including both symmetric and asymmetric, 3-terminal (3-T) and 4-terminal (4-T) devices. Based on this potential distribution model, the main short-channel effects including subthreshold swing, drain induced barrier lowering, and the threshold voltage are investigated. The model shows an excellent fit to data obtained from a numerical simulator in predicting the characteristics of an arbitrary DGMOSFET.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 51, Issue 3, March 2011, Pages 543–549
نویسندگان
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