کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
549476 872378 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optimization of high voltage LDMOSFETs with complex multiple-resistivity drift region and field plate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Optimization of high voltage LDMOSFETs with complex multiple-resistivity drift region and field plate
چکیده انگلیسی

An improved high voltage LDMOSFET with multiple-resistivity drift region is proposed. Using the 2-D process simulator TSUPREM4 and device simulator MEDICI, we design a conventional LDMOSFET optimized for breakdown voltage. Then multiple-resistivity drift region is incorporated, with optimized thickness and doping concentration to reduce specific on-resistance while the breakdown voltage is not degraded. To further improve the device performance, we apply a field plate above the drift region to attract more electrons. Carrier concentration in the channel is increased, so drain current level is improved. The simulation result shows that the optimized complex structure, containing both multiple-resistivity drift region and a field plate, exhibits a 34.2% reduction in specific on-resistance with a mere 2.5% degradation of breakdown voltage compared to the standard LDMOSFET.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 50, Issue 7, July 2010, Pages 949–953
نویسندگان
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