کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
549523 872381 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect
چکیده انگلیسی

The charge transport mechanism in amorphous alumina, Al2O3, is investigated both theoretically and experimentally. We found that the experimental current–field–temperature dependencies can hardly be understood based on the commonly used Frenkel effect or the thermally-assisted tunneling model. Instead, we suggest that the charge transport in Al2O3 is related to the ionization of the deep trap by multiphonon tunneling. Excellent agreements between the predicted, the measured data were obtained by using the proposed multiphoton model with the following values of trapping parameters: thermal ionization energy of 1.5 eV, optical ionization energy of 3.0 eV, phonon energy of 0.05 eV, electron effective mass of 0.4me. The density of electron trap and electron capture cross-section of neutral traps are 2 × 1020 cm−3 and 5 × 10−15 cm2, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 50, Issue 2, February 2010, Pages 207–210
نویسندگان
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