Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain

A measurement setup for the characterization of very-fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with a guard ring in a 65 nm and 130 nm CMOS technology. The superior behavior of gated diodes during triggering is highlighted.