کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
549572 872387 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigating the CDM susceptibility of IC’s at package and wafer level by capacitive coupled TLP
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Investigating the CDM susceptibility of IC’s at package and wafer level by capacitive coupled TLP
چکیده انگلیسی

The method of the capacitive coupled transmission line pulsing (CC-TLP) is applied to a product IC at package level and for the first time at wafer level. The investigated product showed a field failure which could be reproduced by the CDM. The application of the CC-TLP to the product at package and wafer level also reproduced the field failure. Furthermore the measured failure currents correlate very well with the failure currents under CDM conditions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 49, Issue 12, December 2009, Pages 1476–1481
نویسندگان
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