کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5496650 | 1399861 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain-induced modulation on phonon and electronic properties of suspended black phosphorus field effect transistor
ترجمه فارسی عنوان
مدولاسیون ناشی از فشار بر روی خواص فونون و الکترونیک ترانزیستور اثر فیلد فسفر سیاه معلق
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کلمات کلیدی
فسفر سیاه، ترانزیستور اثر میدان، نژاد، معلق،
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
چکیده انگلیسی
Black phosphorus has recently appeared as a promising two-dimensional material for applications in high performance nanoelectronics. Its single- and few-atomic layer forms in field-effect transistors have attracted a lot of attention due to the tunable bandgap (0.3-2.0 eV), high carrier mobility (1000 cm2âVâ1âsâ1) and decent on-off ratios (105). Here, we demonstrate a suspended black phosphorus field effect transistor (BP-FET) and utilize Raman spectroscope to characterize the strain on the effects of Raman phonon. We find that red shifts appear in all the three vibrational modes (Ag1, B2g and Ag2) in different degrees. Among them, Ag1 mode is most sensitive to the tensile strain. We further investigate the electronic properties with a Cascade semi-automatic probe station. The linear relationships in the output curves indicate the contacts between black phosphorus and electrodes are ohmic contacts. The transfer characteristic curves declare the drain current modulation is â¼7.6Ã103 for the hole conduction and â¼57 for the electron conduction. Mobility of this device is found to be 347.5 cm2âVâ1âsâ1 and 4.9 cm2âVâ1âsâ1 for the hole and electron conduction, respectively. These results provide a theoretical basis for the coordination of high-performance black phosphorus electronic components.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 381, Issue 8, 26 February 2017, Pages 792-795
Journal: Physics Letters A - Volume 381, Issue 8, 26 February 2017, Pages 792-795
نویسندگان
Bo Zheng, Naichao Si, Guoxin Xie, Quan Wang,