کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
549796 | 872409 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of reverse substrate bias on ultra-thin gate oxide n-MOSFET degradation under different stress modes
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Degradation of ultra-thin gate oxide n-MOSFET with halo structure is studied under different stress modes with the increase of reverse substrate bias. The variation of device degradation is characterized by monitoring the substrate current during stress. When the gate voltage is smaller than a critical value, the device degradation first decreases and then increases with the increase of reverse substrate voltage; otherwise, the device degradation increases continually. The critical gate voltage can be determined by measuring the substrate current variation with the increase of reverse substrate voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 46, Issue 1, January 2006, Pages 164–168
Journal: Microelectronics Reliability - Volume 46, Issue 1, January 2006, Pages 164–168
نویسندگان
Yao Zhao, Mingzhen Xu, Changhua Tan,