Measurement of the thermal conductivity of Gd2Zr2O7 films by using the thermoreflectance method

The thermal conductivity of Gd2Zr2O7 films deposited on Al2O3 by RF sputtering is investigated by using the thermoreflectance method. In order to validate the thermoreflectance method, the thermal conductivity of Gd2Zr2O7 films was measured by using the 3ω method with wide heater. The interfacial resistance at the interface between Au metal heater and Al2O3 substrate is investigated by thermoreflectance measurements of the surface of the Au heater on Al2O3 substrate. The thermal conductivity of Gd2Zr2O7 films deposited on Al2O3 by RF sputtering show the film thickness-dependence by using thermoreflectance method. It is understood with the interfacial thermal resistance between film and substrate, and the interfacial thermal resistance between Gd2Zr2O7 and Al2O3 (Rk) is 4.45 ± 1.35 × 10−8 m2 K W−1.

► Thermal conductivity of Gd2Zr2O7 films deposited on Al2O3 by RF sputtering was studied by using thermoreflectance method.
► The analytic thermal impedance was derived to verify the result of thermoreflectance method.
► The interfacial thermal resistance between film and substrate was studied for understanding the experimental results.
► This study validated the thermal reflectance method, which can be used for more purposes such as a nondestructive probe of defects in devices.