کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
675585 | 1459626 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal analysis of high power GaN-based LEDs with ceramic package
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
جریان سیال و فرایندهای انتقال
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چکیده انگلیسی
In this paper we present thermal analysis of three kinds of ceramic package designs for high power LEDs. The analysis was made by transient thermal measurement and thermal simulation using the Finite Volume Method. The three ceramic packages under investigation employ same configuration of GaN-based chip, but they have different size and distribution of thermal vias. Three designs of LED packages resulted in significantly different thermal behaviors. Thermal behaviors, described as thermal resistance, of the three packaging designs were compared and evaluated as functions of bulk thermal resistance, spreading resistance, and surface roughness. The deviation between the simulated results and measured data were attributed to the different surface roughness in the interfaces between the packaging components. It was demonstrated that the junction temperature decreases with the effective contact area ratio in the LED packages.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thermochimica Acta - Volume 455, Issues 1â2, 1 April 2007, Pages 95-99
Journal: Thermochimica Acta - Volume 455, Issues 1â2, 1 April 2007, Pages 95-99
نویسندگان
Lianqiao Yang, Sunho Jang, Woongjoon Hwang, Moowhan Shin,