Dynamically stable nanostructures in heavy-ion implanted silica glass

Surface recession does not dominate for 60 keV Cu- ion implantation of silica glass. Formation of dynamically stable structures during 60 keV Cu- ion implantation of silica glass cannot be explained if the drift of implants is excluded from considerations. Considerations have shown that the drift's contribution increases with increasing the ion flux. A mechanism of depleted region formation in the dynamically stable structures has been demonstrated. According to this mechanism, formation of a depleted region within the implanted layer is caused by expelling effect of electric field from the region where the electric field is zero. Necessary drift velocity is provided by Cu+ solutes. A method utilizing images of the dynamically stable structures has been proposed for evaluation of the implant drift's role in the saturation kinetics.