کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6879647 | 1443116 | 2018 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of DC-RF and breakdown behaviour in Lgâ¯=â¯20â¯nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
شبکه های کامپیوتری و ارتباطات
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, we systematically investigated the DC-RF and breakdown voltage characteristics of Lgâ¯=â¯20â¯nm novel asymmetric GaAs metamorphic high electron mobility transistor (MHEMT) using Sentaurus-TCAD tool. The highlights of the novel asymmetric GaAs MHEMT are the cavity in the asymmetric Î-gate region, n+-type In0.52Al0.48As/In0.53Ga0.47As/In0.75Ga0.25As cap layers and n+-type In0.52Ga0.48As vertical source/drain (S/D) regions. The influence of asymmetric gate recess width on DC-RF and ON and OFF-state breakdown voltage characteristics of the novel asymmetric GaAs MHEMT has been systematically investigated using hydrodynamic (HD) charge transport model. The physical models such as impact ionization model, high electric field electron mobility model, Shockley-Read-Hall and recombination models and density gradient model are also included during room temperature Sentaurus-TCAD simulation in order to accurately obtain the DC-RF and breakdown performance parameters. The 20â¯nm gate length novel asymmetric GaAs MHEMT obtained a maximum transconductance (gm_max) and drain current IDS_max of 3350â¯mS/mm and 1230â¯mA/mm respectively. The transit frequiencies fT and fmax obtained by the proposed 20â¯nm gate length GaAs MHEMT are 643â¯GHz and 1230â¯GHz respectively. The 20â¯nm gate length novel asymmetric GaAs MHEMT also exhibited an ON-state (BVON) and OFF-state (BVOFF) breakdown voltages of 3.1â¯V and 7.2â¯V respectively. To the best knowledge of authors, this is the record combination of DC-RF and breakdown performance parameter values obtained for GaAs MHEMT which makes them highly suitable for next generation high power high speed applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: AEU - International Journal of Electronics and Communications - Volume 84, February 2018, Pages 387-393
Journal: AEU - International Journal of Electronics and Communications - Volume 84, February 2018, Pages 387-393
نویسندگان
J. Ajayan, T. Ravichandran, P. Mohankumar, P. Prajoon, J. Charles Pravin, D. Nirmal,