کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6945444 1450514 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure
چکیده انگلیسی
Using a simple fields induced mass motion method, Au/a-C:Co/Au planar structures with micro-gap Au electrodes were fabricated. Asymmetric current-voltage characteristics and resistive switching behaviours were observed in these cells. Reliable performance, with a reasonable ON/OFF ratio of >4, stable endurance of >200 cycles, and good retention of >105 s, were achieved at the read voltage of −3.6 V. Space charge limited current (SCLC) theory with an asymmetric potential barrier caused by different densities of traps was proposed to explain the asymmetric resistive switching behaviour.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 87, August 2018, Pages 52-56
نویسندگان
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