کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945444 | 1450514 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure](/preview/png/6945444.png)
چکیده انگلیسی
Using a simple fields induced mass motion method, Au/a-C:Co/Au planar structures with micro-gap Au electrodes were fabricated. Asymmetric current-voltage characteristics and resistive switching behaviours were observed in these cells. Reliable performance, with a reasonable ON/OFF ratio of >4, stable endurance of >200 cycles, and good retention of >105 s, were achieved at the read voltage of â3.6â¯V. Space charge limited current (SCLC) theory with an asymmetric potential barrier caused by different densities of traps was proposed to explain the asymmetric resistive switching behaviour.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 87, August 2018, Pages 52-56
Journal: Microelectronics Reliability - Volume 87, August 2018, Pages 52-56
نویسندگان
D. Zhang, T.R. Li, J.W. Zhou, Y.C. Jiang, B. Ren, J. Huang, J.M. Zhang, L. Wang, J. Gao, L.J. Wang,