کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945465 | 1450514 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thermal annealing effects on electrical characteristics of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diodes (SBDs) are investigated in the temperature range of 400-1100â¯Â°C. The thermal evolution of deep level traps in annealed SBDs is also analyzed by thermally stimulated capacitance (TSCAP) spectroscopy. As-deposited Ni/4H-SiC SBDs exhibited non-ideal electrical properties compared to Ti/4H-SiC SBDs. The electrical parameters of the Ni/4H-SiC SBDs are improved upon annealing at 400â¯Â°C for 30â¯min. in Ar ambient. However, deterioration in the SBD characteristics is observed from the temperature of 500â¯Â°C, so optimal annealing temperature for our Ni/4H-SiC SBDs is 400â¯Â°C. On the other hand, electrical properties of the Ti/4H-SiC SBDs are found to degrade even from the annealing temperature of 400â¯Â°C and hence as-deposited Ti/4H-SiC SBDs have the better properties. No considerable changes in the trap concentrations at Ec-0.63â¯eV and Ec-1.13â¯eV are identified in the SBDs up to the annealing temperature of 600â¯Â°C. The heat treatment on or above 800â¯Â°C results in poor rectifying behavior in both the SBDs, therefore the diode rectification is disappeared from 800â¯Â°C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 87, August 2018, Pages 213-221
Journal: Microelectronics Reliability - Volume 87, August 2018, Pages 213-221
نویسندگان
P. Vigneshwara Raja, N.V.L. Narasimha Murty,