کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945485 | 1450514 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A simple metal-semiconductor substructure for the advanced thermo-mechanical numerical modeling of the power integrated circuits
ترجمه فارسی عنوان
یک زیر ساختار ساده فلز-نیمه هادی برای مدلسازی عددی پیشرفته ترمو مکانیکی مدارهای مجتمع قدرت
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
چکیده انگلیسی
The metallization of double-diffused metal-oxide semiconductor (DMOS) power devices, which operate under fast thermal cycling (FTC), undergoes thermal induced plastic metal deformation (TPMD). The design of the metallization has a significant impact on the device lifetime and thus requires a thorough understanding of the temperature, stress and strain distribution. A simple three-dimensional (3D) transistor substructure which is commonly found in various high integration Bipolar-CMOS-DMOS (BCD) technologies is analysed. The thermomechanical behaviour is studied with the finite element method (FEM) for investigation of two potential failure mechanisms: delamination of power metal and accumulation of plastic deformation in signal metallization layer (which leads to inter-metal dielectric cracking). These failure mechanisms are analysed on two versions of the structure: the first one has only signal and power metal lines and the second one has vias, in addition to the signal and power metal lines. The target of the paper is to propose an efficient finite element analysis (FEA) model that can be used for a qualitative assessment of thermo-mechanical phenomena in the metal system of high integration BCD technologies.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 87, August 2018, Pages 142-150
Journal: Microelectronics Reliability - Volume 87, August 2018, Pages 142-150
نویسندگان
Adrian Bojita, Cristian Boianceanu, Marius Purcar, Ciprian Florea, Dan Simon, Cosmin-Sorin Plesa,