کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945602 | 1450517 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors](/preview/png/6945602.png)
چکیده انگلیسی
The effect of La-silicate interface layer (IL) on the electrical characteristics of 4H-SiC metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited SiO2 (ALD-SiO2) gate dielectrics was investigated. In addition to a slight reduction in the interface state density (Dit), the surface potential fluctuation was greatly reduced due to the reduction in the fixed charges (Qfix) with La-silicate IL. Moreover, two orders of magnitude reduction in the oxide trap density in the ALD-SiO2 layer adjacent to the La-silicate IL was confirmed. Physical analysis revealed the reduction in carbon concentration and incorporation of La atoms adjacent to the La-silicate IL.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 84, May 2018, Pages 248-252
Journal: Microelectronics Reliability - Volume 84, May 2018, Pages 248-252
نویسندگان
Y.M. Lei, H. Wakabayashi, K. Tsutsui, H. Iwai, M. Furuhashi, S. Tomohisa, S. Yamakawa, K. Kakushima,