کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945709 | 1450518 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Compact conduction band model for transition-metal dichalcogenide alloys
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Monolayer transition metal dichalcogenide (TMD) alloys, such as Mo1 â xWxS2, owing to the unique electronic properties of the atomically thin two-dimensional layered structure, can be made into high performance metal-oxide-semiconductor field-effect transistors. The compact conduction band model of effective mass approximation (EMA) with the second nonparabolic correction is proposed for monolayer Mo1 â xWxS2. The three band tight-binding (TB) method is used for calculating the band structure for monolayer TMD alloys such as Mo1 â xWxS2, and a compact conduction band model is precisely developed to fit the band structures of TMD alloys calculated with tight-binding methods for the calculation of electron mobility. The impact of alloys on electron mobility of monolayer Mo1 â xWxS2 is discussed in this study.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 83, April 2018, Pages 223-229
Journal: Microelectronics Reliability - Volume 83, April 2018, Pages 223-229
نویسندگان
Kuan-Ting Chen, Ren-Yu He, Chia-Feng Lee, Ming-Ting Wu, Shu-Tong Chang,