کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6945709 1450518 2018 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Compact conduction band model for transition-metal dichalcogenide alloys
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Compact conduction band model for transition-metal dichalcogenide alloys
چکیده انگلیسی
Monolayer transition metal dichalcogenide (TMD) alloys, such as Mo1 − xWxS2, owing to the unique electronic properties of the atomically thin two-dimensional layered structure, can be made into high performance metal-oxide-semiconductor field-effect transistors. The compact conduction band model of effective mass approximation (EMA) with the second nonparabolic correction is proposed for monolayer Mo1 − xWxS2. The three band tight-binding (TB) method is used for calculating the band structure for monolayer TMD alloys such as Mo1 − xWxS2, and a compact conduction band model is precisely developed to fit the band structures of TMD alloys calculated with tight-binding methods for the calculation of electron mobility. The impact of alloys on electron mobility of monolayer Mo1 − xWxS2 is discussed in this study.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 83, April 2018, Pages 223-229
نویسندگان
, , , , ,