کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945828 | 1450520 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices](/preview/png/6945828.png)
چکیده انگلیسی
We have investigated the effects of proton irradiation on the subsequent time-dependent dielectric breakdown (TDDB) lifetimes of partially depleted (PD) SOI devices. Our results show that the TDDB lifetimes of the devices increased after proton irradiation and the amplitude increased with the intensification of the total ionizing dose (TID) damage. Moreover, the radiation-induced leakage currents (RILC) and the TDDB lifetimes of the irradiated devices by protons were dependent on TID damage but independent of energy of protons. We interpreted these results and mechanisms in terms of the effects of radiation-induced traps on the stressing current during the reliability testing, which may be significant to further expand the understanding of the radiation effects of the devices used in the space radiation environment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 81, February 2018, Pages 112-116
Journal: Microelectronics Reliability - Volume 81, February 2018, Pages 112-116
نویسندگان
Teng Ma, Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou, Dandan Su, Qi Guo,