کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945832 | 1450520 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Measurement considerations for evaluating BTI effects in SiC MOSFETs
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this paper, we review the phenomenon of bias-temperature instability (BTI) in SiC MOS devices, with an emphasis on the effects of metrology. The complex behavior of the charge trapping mechanism responsible for VT instability requires careful consideration of measurement conditions and precise control of the associated parameters to produce meaningful results. Preconditioning the devices to be tested, as well as making faster measurements, will elicit the truest response. Any bias interruption or delay between stressing and measurement will produce a large deterioration in the original VT drift caused by the stressing, though this can be effectively counteracted by briefly reapplying the stress bias before measurement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 81, February 2018, Pages 121-126
Journal: Microelectronics Reliability - Volume 81, February 2018, Pages 121-126
نویسندگان
Daniel B. Habersat, Aivars J. Lelis, Ronald Green,