کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945997 | 1450521 | 2018 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Embedding a feedforward controller into the IGBT gate driver for turn-on transient improvement
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Embedding a feedforward controller into the IGBT gate driver for turn-on transient improvement Embedding a feedforward controller into the IGBT gate driver for turn-on transient improvement](/preview/png/6945997.png)
چکیده انگلیسی
This paper proposes an active gate drive method based on a feedforward control for turn-on condition in IGBTs. The transient improvement with minimum undesirable effect on the efficiency is the main objective of this research. The new gate driver (GD) improves the trade-off between switching loss and device stress at the turn-on condition, without getting feedback from the output. The operation principle and implementation of the controller in the GD are presented. The effect of the proposed GD on the transient behaviour, efficiency, junction temperature and electromagnetic interference (EMI) during turn-on switching is evaluated by both simulation and experimental tests. The new GD is evaluated under hard switching condition and various frequencies. Advantages and disadvantages of the method have been discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 80, January 2018, Pages 230-240
Journal: Microelectronics Reliability - Volume 80, January 2018, Pages 230-240
نویسندگان
Hamidreza Ghorbani, Vicent Sala Caselles, Alejandro Parades Camacho, Jose Luis Romeral Martinez,