کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946159 | 1450522 | 2017 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characterization and reliability of submicron SOI CMOS technology in the extended temperature range (to 300 °C)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
I-V characteristics and reliability parameters for the set of hardened SOI MOSFET's with special layouts and tungsten metallization to provide additional thermal tolerance for high-temperature SOI CMOS IC's are investigated in the temperature range up to 300 °C. The reliability aspects under test for MOSFET's are threshold voltage shift, subthreshold slope and mobility degradation, gate leakage current rise; for tungsten metallization (contacts, conductor lines and vias) I-T and R-T characteristics, failure time. The SOI MOSFET standard compact SPICE model BSIMSOI with traditional temperature limit of 150 °C is modified to be used for CMOS IC simulation in the extended temperature range up to 300 °C. The results indicate that the 0.5-0.18 μm SOI MOSFET's with tungsten metallization have stable electrical behavior that makes them possible to be used during implementation of HT CMOS IC's (to 300 °C).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 79, December 2017, Pages 416-425
Journal: Microelectronics Reliability - Volume 79, December 2017, Pages 416-425
نویسندگان
Konstantin O. Petrosyants, Igor A. Kharitonov, Sergey V. Lebedev, Lev M. Sambursky, Sergey O. Safonov, Veniamin G. Stakhin,