کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6946320 1450542 2016 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On the avalanche ruggedness of optimized termination structure for 600 V punch-through IGBTs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
On the avalanche ruggedness of optimized termination structure for 600 V punch-through IGBTs
چکیده انگلیسی
In this paper, the current paths in avalanche conditions of a Floating Field Ring (FFR) termination for a Punch-Through (PT) Insulated Gate Bipolar Transistor (IGBT) are analyzed. The design of the termination region is achieved with two different optimization techniques, and both static and dynamic electrical behavior are analyzed by means of 2D TCAD simulations, up to high current density levels. A comprehensive analysis of the Unclamped Inductive Switching (UIS) operation of the proposed terminations is carried-out with electro-thermal simulations. Although the behavior of both structures at low current levels is different, results show the same current crowding effect at the main junction for high current levels, resulting in a reduced conduction area of the overall termination, hence, of the avalanche reliability. Finally, experimental confirmation of filamentary current conduction during UIS test are detected on 600 V commercial devices by means of transient infrared thermography.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 58, March 2016, Pages 17-25
نویسندگان
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