کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946464 | 1450545 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28Â nm FDSOI technology
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28Â nm FDSOI technology Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28Â nm FDSOI technology](/preview/png/6946464.png)
چکیده انگلیسی
We investigate stochastic and deterministic reliability problems in the hybrid magnetic tunnel junction (MTJ)/MOS circuit which is implemented with ultra thin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) technology. A spin torque transfer (STT) magnetic flip-flop (MFF) is designed with ultra wide voltage range, with 0.5Â V to 1.2Â V sense/read voltage, and 0.95Â V to 2Â V writing voltage, by using an industrial 28Â nm design kit and a physics-based STT-MTJ compact model. MFF performance can be improved with forward body bias (FBB) technology. The reliability-aware study shows that variability induced read/write failure is more dominant compared with aging induced degradation. Reliability-aware design of STT-MFF is discussed by proper selection of operation voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1323-1327
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1323-1327
نویسندگان
H. Cai, Y. Wang, L.A.B. Naviner, W.S. Zhao,