Improvement of MOSFET matching characterization with calibrated multiplexed test structure

This paper presents a way to implement a test structure able to measure accurately a large number of threshold voltage values for Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) matching characterization. A multiplexed system able to select a single transistor among others in a small array is used. This architecture guarantees a similar environment for all transistors in the array, while requiring a small number of pads for measurement. Moreover, the influence of the multiplexer switches can be evaluated: their unwanted contribution to the measurement can therefore be compensated. An experimental study to evaluate the influence of this multiplexer on measurement and the efficiency of the compensation is conducted. Silicon results are presented in order to validate the concept.