کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946594 | 1450545 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The ESD robustness of multi-finger nMOSFET transistors in an advanced RF CMOS technology has been analysed by both TLP and, for the first time, by transient interferometric mapping (TIM) technique. Failure current It2 has been studied for different source, gate and bulk contact grounding configurations, for TLP pulse duration between 25Â ns and 550Â ns and TLP rise time of 1Â ns and 10Â ns. The lateral distribution of dissipated thermal energy during a TLP pulse has been measured by TIM. The ESD failures for selected pad configurations are investigated by DC-IV and physical failure analysis. The highest (lowest) It2 has been revealed for floating (grounded) gate and bulk pads, and attributed to the pn junction (gate oxide) damage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1471-1475
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1471-1475
نویسندگان
Matteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany,