Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes

The purpose of this paper is to present a fully-coupled electro-magnetic field formulation including Lorentz force corrections with the purpose of investigating ESD events in great detail in silicon (FEOL) and the metal stack (BEOL). This study is focused on ESD events in advanced CMOS technology. For specific ESD events, responses, design and topology it is important to take into account all electromagnetic phenomena in the structure. To perform such an accurate study, the first step is to build a powerful tool for the harmonic and transient regime coupling all electric and magnetic fields. Typical ESD structures are simulated to ultimately know the impact of the electro-magnetic field and Lorentz force. The harmonic regime is used for parasitic capacitance extraction and the transient regime for the ESD behaviour. We demonstrate that the simulation tool has a wide range of applicability by giving additional applications.