| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
|---|---|---|---|---|
| 6946641 | 1450545 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nitrogen-Vacancy centers in diamond for current imaging at the redistributive layer level of Integrated Circuits
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present a novel technique based on an ensemble of Nitrogen-Vacancy (NV) centers of diamond to perform Magnetic Current Imaging (MCI) on an Integrated Circuit (IC). NV centers of diamond permit to measure the three components of the magnetic fields generated by mA range current in an IC structure over a field of 50 Ã 200 μm with sub-micrometric resolution. Vector measurements allow the use of a more robust algorithm than those used for MCI using GMR or SQUID sensors and it is opening new current reconstruction prospects. Calculated MCI from these measurements shows a very good agreement with theoretical current path. Acquisition time is around 10 s, which is much faster than scanning measurements using Superconducting Quantum Interference Device (SQUID) or Giant Magneto Resistance (GMR). The experimental set-up relies on a standard optical microscope, and the measurements can be performed at room temperature and atmospheric pressure. These early experiences, not optimized for IC, show that NV centers in diamond could become a real alternative for MCI in IC.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1549-1553
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1549-1553
نویسندگان
A. Nowodzinski, M. Chipaux, L. Toraille, V. Jacques, J.-F. Roch, T. Debuisschert,