Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states

In this work we analyzed the effect of different stress configurations on p- and n-type organic thin-film-transistors, to emulate the various operating conditions in a real application. Devices showed the largest degradation when they are stressed in the ON condition, because of the uniform charge injection and defect generation in the whole channel area. Charge trapping kinetics and mobility degradation was also strongly dependent on the semiconductor type, suggesting a key-role of the semiconductor on the device reliability.