کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946775 | 1450547 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Assessment methodology of the lateral migration component in data retention of 3D SONOS memories Assessment methodology of the lateral migration component in data retention of 3D SONOS memories](/preview/png/6946775.png)
چکیده انگلیسی
A new procedure to assess the impact of lateral charge migration from the overall retention transient is developed. This experimental procedure is designed to be applied on any 3D NAND string, and does not require devices specifically designed; this allows to assess the impact of lateral migration in realistic conditions. The experimental procedure relies on comparing retention loss of a standard sample with a “control sample” not suffering from lateral migration, thanks to a pre-conditioning operation. The pre-conditioning procedure to obtain the control samples is discussed in detail and demonstrated through measurements and simulations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 1697-1701
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 1697-1701
نویسندگان
Lifang Liu, Antonio Arreghini, Geert Van den bosch, Liyang Pan, Jan Van Houdt,