کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946797 | 1450545 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A unified multiple stress reliability model for microelectronic devices - Application to 1.55 μm DFB laser diode module for space validation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The establishment of European suppliers for DFB Laser Modules at 1.55 μm is considered to be essential in the context of future European space programs, where availability, cost and schedule are of primary concerns. Also, in order to minimize the risk, associated with such a development, the supplier will be requested to use components which have already been evaluated and/or validated and/or qualified for space applications. The Arrhenius model is an empirical equation able to model temperature acceleration failure modes and failure mechanisms. The Eyring model is a general representation of Arrhenius equation which takes into account additional stresses than temperature. The present paper suggests to take advantage of these existing theories and derives a unified multiple stress reliability model for electronic devices in order to quantify and predict their reliability figures when operating under multiple stress in harsh environment as for Aerospace, Space, Nuclear, Submarine, Transport or Ground. Application to DFB laser diode module technologies is analyzed and discussed based on evaluation test program under implementation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1729-1735
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1729-1735
نویسندگان
A. Bensoussan, E. Suhir, P. Henderson, M. Zahir,