کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946858 | 1450547 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of gate drive voltage on avalanche robustness of trench IGBTs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Impact of gate drive voltage on avalanche robustness of trench IGBTs Impact of gate drive voltage on avalanche robustness of trench IGBTs](/preview/png/6946858.png)
چکیده انگلیسی
In this paper, the impact of the gate drive voltage on avalanche capability of Trench-IGBTs is deeply analyzed by means of infrared (IR) thermal measurements and TCAD simulations during Unclamped Inductive Switching (UIS) test. The reported results are carried out for a case study on a 1.2Â kV - 200Â A rated device. Experimental results show the effect of the gate drive voltage during avalanche operation. A possible non-uniform current conduction for unipolar gate-driver case is proven using transient thermal maps. As a consequence, the dependence of the actual breakdown voltage (VBR) of the device active area with a negative gate biasing is investigated for trench structures. A reduction of the VBR and a slighter interplay between the T-IGBT cells and the termination area is demonstrated for a negative gate bias during the blocking state using ad-hoc TCAD electro-thermal simulations. Finally, the boosted avalanche capability is proven for under-biased case and a theoretical explanation of the involved phenomena is provided.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 1828-1832
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 1828-1832
نویسندگان
M. Riccio, L. Maresca, A. Irace, G. Breglio, Y. Iwahashi,