کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946891 | 1450547 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Palladium-doped and (Cu, Pt)-doped high reliability gold wires were used to form wire bond interconnects on aluminum IC metallization. By isothermal annealing of wire bond samples the formation of intermetallic Au-Al phases was stimulated. SEM/EBSD investigations of the phase regions exhibited significantly slower isothermal growth rates compared to a reference gold wire. Correlated TEM, STEM-EDXS and nanobeam diffraction analyses revealed that Pd is preferentially incorporated into the Au8Al3 intermetallic forming a new stable phase but additionally can obviously form a new Pd-rich ternary intermetallic. In comparison, Cu dopants are also accumulated into a new Al-Au-Cu phase while Pt is rather found agglomerating within grain boundaries and interfaces. These results suggest a diffusion barrier model that allows discussing how wire doping can affect the bond contact microstructure, thus increasing the lifetime of bond contacts.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 2000-2005
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 2000-2005
نویسندگان
B. März, A. Graff, R. Klengel, M. Petzold,