Quantitative Scanning Microwave Microscopy: A calibration flow

A procedure for doping concentration calibration using Scanning Microwave Microscopy (SMM) is presented. Calibration measurements are performed at a purpose-built sample comprising a wide range of doping concentrations of both n- and p-type implants at the sample surface. In order to evaluate the criticality of parameters affecting the measured signal, a transmission line model is used that takes into account the physical elements forming the evaluated network including modelling parameters for the tip-sample-interaction. Using a vertical DMOS sample a showcase flow for quantification is exercised and the attainable degree of accuracy is discussed.