کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946916 | 1450547 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electromigration reliability of open TSV structures
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Through silicon vias are the components in three-dimensional integrated circuits, which are responsible for the vertical connection inside the dies. In this work we present studies about the reliability of open through silicon vias against electromigration. A two-step approach is followed. In the first step the stress development of a void free structure is analysed by means of simulation to find the locations, where voids due to stress are most probably nucleated. In the second step, voids are placed in the through silicon vias and their evolution is traced including the increase of resistance. The resistance raises more than linearly in time and shows an abrupt open circuit failure. These results are in good agreement with results of time accelerated electromigration tests.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 2133-2137
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 2133-2137
نویسندگان
W.H. Zisser, H. Ceric, J. Weinbub, S. Selberherr,