کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946921 | 1450550 | 2012 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Time dependent dielectric breakdown physics - Models revisited
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Time-Dependent Dielectric Breakdown (TDDB) models for silica(SiO2)-based dielectrics are revisited so as to better understand the ability of each model to explain quantitatively the generally accepted TDDB observations. Molecular dielectric degradation models, which lead to percolation path generation and eventual TDDB failure, tend to fall into three broad categories: field-based models, current-based models, and complementary combinations of field and current-based models. A complementary combination of field-induced polar-bond stretching and current-induced bond-catalysis seems to be required, at the molecular level, to explain the generally accepted TDDB observations. Thus, TDDB modeling is not simply the use of field or current - but both. Complementary combinations of field and current are required to fully explain the generally accepted TDDB observations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issues 9â10, SeptemberâOctober 2012, Pages 1753-1760
Journal: Microelectronics Reliability - Volume 52, Issues 9â10, SeptemberâOctober 2012, Pages 1753-1760
نویسندگان
J.W. McPherson,