Investigation of the effects of constant voltage stress on thin SiO2 layers using dynamic measurement protocols

In this work, thin oxide degradation resulting from constant voltage stress has been investigated. New experimental protocols have been set up to gather information about the nature and location of the electric charge trapped in the oxide during electric stress. Experimental results obtained from dynamic current and capacitance measurements evidence the simultaneous presence of charges trapped in the oxide bulk as well as interface traps at low electron injection. In particular, real-time monitoring of the screening of positive trapped charge by tunneling electrons and of the emptying of interface states has been achieved.