کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6946991 1450550 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress
چکیده انگلیسی
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under CHC/GIDL alternating stress is investigated. CHC stress generates negative oxide charges while GIDL stress generates positive oxide charges in the gate oxide near drain region. Theses oxide charges degrade device reliability, and degradation is enhanced when CHC stress and GIDL stress are applied alternatively. The degradation under CHC/GIDL alternating stress is due to the neutral traps and interface traps, and increases with the increase in frequency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issues 9–10, September–October 2012, Pages 1901-1904
نویسندگان
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