Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs

The effect of electron-electron scattering (EES) on a nanoscale n-channel metal-oxide-semiconductor field-effect transistor was investigated. Experimental results indicate that EES stress creates more interface states and negative oxide charges than does channel hot-carrier (CHC) stress. Moreover, shifts of gate induced drain leakage current and substrate current confirm that defects generated by EES are distributed in the channel and drain region. Thus, the worst case hot carrier stress condition should be modified from CHC stress to EES stress.