Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs

► We model charge (de)trapping dynamics in oxides traps using a kinetic Monte-Carlo simulator. ► Random dopants fluctuations induce dispersion in trap assisted tunnelling current. ► Electron concentration dispersion rather than tunnelling barrier is responsible for this spread. ► Only a few number of traps are involved in tunnelling processes. ► Trap density extraction are skewed by random dopant fluctuations.