Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

Threshold voltage (VT) and mobility (μ) shifts due to process related variability and Channel-Hot Carrier (CHC) degradation are experimentally characterized in strained and unstrained pMOSFETs. A simulation technique to include the time-dependent variabilities of VT and μ in circuit simulators is presented and used to evaluate their effects on CMOS inverters performance.