کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6947015 1450550 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic
چکیده انگلیسی
A first study of the BTI reliability of a 6 Å EOT CMOS process for potential application in sub-threshold logic is presented. Considerable threshold voltage shifts are observed also for sub-threshold operation. The observed shifts convert to a remarkable current reduction due to the exponential dependence of current on Vth in this operating regime. Moreover, the pMOS is observed to degrade significantly more w.r.t. the nMOS device, inducing a detrimental Vth-imbalance. A proper device failure criterion is proposed, based on simulation of the DC robustness of an inverter logic circuit.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issues 9–10, September–October 2012, Pages 1932-1935
نویسندگان
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