کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6947075 1450550 2012 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparison of FET electro-optical modulation for 1300 nm and 1064 nm laser sources
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Comparison of FET electro-optical modulation for 1300 nm and 1064 nm laser sources
چکیده انگلیسی
Detecting laser beam reflectance modulation intensity (RMI) from the back-side obtains useful information about the functional performance of an integrated circuit (IC). In this paper, we want to focus on the different signal signatures coming from different regions of a single transistor (gate and drain) to better understand the origin of these signals using two different wavelengths (1064 nm and 1300 nm). For this reason, very simple functional cases have been selected for analysis and simulation of the optical properties: varactor in inversion (gate region) and the reverse-biassed pn-junction (drain region).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issues 9–10, September–October 2012, Pages 2024-2030
نویسندگان
, , , , ,