Optimum Si thickness for backside detection of photon emission using Si-CCD

Nowadays, InGaAs detectors are preferable choice for backside photon emission (PE) applications. However, new, intensified Si CCD detectors with their ultra-low noise performance, when additionally combined with proper backside sample preparation, namely substrate thinning, may become a competition to the InGaAs based solution. In this study we present the PE experiments performed with low noise Si CCD detectors. We show the measurement results of the integral light intensity (power) as a function of the remaining Si thickness. We also demonstrate the continuous spectrum acquisition results obtained through the thinned backside of the chip. Finally we also discuss the issue of the optimal Si substrate thickness taking into account PE power detectability, imaging resolution and heat removal efficiency.