Monte Carlo simulation of emission site, angular and energy distributions of secondary electrons in silicon at low beam energies

The information about location, energy and angular distribution of secondary electrons emerging from the irradiated sample is very important for the reconstruction of scanning electron microscopy images and to quantify secondary electron potential contrast measurements. In this paper, an original multiple collisions Monte Carlo code is used to calculate the distribution of the emerging sites, the angular distribution of secondary electrons emitted in silicon at 0.5, 1.0, and 7 keV beam energy. In particular, the angular distribution, and the secondary electron yield are calculated as function of the surface barrier energy, according to the quantum-mechanical model.