کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6947222 1450550 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology
چکیده انگلیسی
We present a comprehensive study on a high reliability RF-MEMS switch with an active thermal recovery capability to counteract stiction. Applying finite element (FE) simulations we investigate the complete recovery process including mechanical, electrical, thermal and fluidic effects. The experimentally calibrated thermo-mechanical FE-model is used to extract key parameters of the recovery process. Therewith we are able to estimate the efficiency of the recovery capability and to figure out possible design improvements in order to optimize the investigated switch with respect to reliability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issues 9–10, September–October 2012, Pages 2235-2239
نویسندگان
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