Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs

► NBTI and PBTI degradation of MOSFETs with SiON or SiO2 gate dielectrics is studied. ► For devices with p++ doped poly gate NBTI-like degradation may occur under PBTI. ► In the absence of holes, acceptor-like defects are created through PBTI.