NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions

► Effects of static and pulsed NBT stressing in p-channel VDMOSFETs are investigated. ► The results for static and pulsed stress are compared in terms of device lifetime. ► Device lifetime is found to be longer under the pulsed stress conditions. ► Lifetime tends to increase with decreasing the duty cycle of pulsed stress voltage.